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AFN8987W - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN8987W, a member of the AFN8987W-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN8987W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 80V/4.6A,RDS(ON)=75mΩ@VGS=10V 80V/3.6A,RDS(ON)=85mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design.

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Datasheet preview – AFN8987W

Datasheet Details

Part number AFN8987W
Manufacturer Alfa-MOS
File Size 682.92 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8987W Datasheet
Additional preview pages of the AFN8987W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN8987W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-89-3L ) AFN8987W 80V N-Channel Enhancement Mode MOSFET Features 80V/4.6A,RDS(ON)=75mΩ@VGS=10V 80V/3.6A,RDS(ON)=85mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems.
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