AFN8936 mosfet equivalent, n-channel enhancement mode mosfet.
60V/4.6A,RDS(ON)=48mΩ@VGS=10V 60V/3.6A,RDS(ON)=54mΩ@VGS=4.5V 60V/2.0A,RDS(ON)=95mΩ@VGS=3.3V Super high density cell design for extremely low RDS (ON) SOT-89-3L package de.
Pin Description ( SOT-89-3L )
AFN8936
60V N-Channel Enhancement Mode MOSFET
Features
60V/4.6A,RDS(ON)=48mΩ@VGS=10V 60V.
AFN8936, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
Image gallery
Download