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AFP2343A - P-Channel MOSFET

Download the AFP2343A datasheet PDF. This datasheet also covers the AFP2343A-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP2343A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-2.8A,RDS(ON)=70mΩ@VGS=- 4.5V -20V/-2.4A,RDS(ON)=92mΩ@VGS=-2.5V -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP2343A-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP2343A
Manufacturer Alfa-MOS
File Size 620.68 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP2343A Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP2341 P-Channel Enhancement Mode MOSFET
AFP2345A P-Channel MOSFET
AFP2301AS 20V P-Channel MOSFET
AFP2303A P-Channel MOSFET
AFP2307A P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP2343A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2343A 20V P-Channel Enhancement Mode MOSFET Features -20V/-2.8A,RDS(ON)=70mΩ@VGS=- 4.5V -20V/-2.4A,RDS(ON)=92mΩ@VGS=-2.5V -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.