AFP2345A Datasheet | Alfa-MOS

Description AFP2345A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 120V P-Channel Enhancement Mode MOSFET Features -120V/-1.0A,RDS(ON)=1.65Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.75Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2345AS23RG 45YW SOT-23 ϡʳ 45 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP2345AS23RG : 7” Tape & Reel ; Pb- Free ;...