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AFP2343A - P-Channel MOSFET

This page provides the datasheet information for the AFP2343A, a member of the AFP2343A-Alfa P-Channel MOSFET family.

Description

AFP2343A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-2.8A,RDS(ON)=70mΩ@VGS=- 4.5V -20V/-2.4A,RDS(ON)=92mΩ@VGS=-2.5V -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – AFP2343A

Datasheet Details

Part number AFP2343A
Manufacturer Alfa-MOS
File Size 620.68 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP2343A Datasheet
Additional preview pages of the AFP2343A datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP2343A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2343A 20V P-Channel Enhancement Mode MOSFET Features -20V/-2.8A,RDS(ON)=70mΩ@VGS=- 4.5V -20V/-2.4A,RDS(ON)=92mΩ@VGS=-2.5V -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.
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