AFP2345A mosfet equivalent, p-channel mosfet.
-120V/-1.0A,RDS(ON)=1.65Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.75Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC .
Pin Description ( SOT-23 )
AFP2345A
120V P-Channel Enhancement Mode MOSFET
Features
-120V/-1.0A,RDS(ON)=1.65Ω@VGS=-10V.
AFP2345A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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