AFP3679S mosfet equivalent, p-channel enhancement mode mosfet.
-30V/-20A,RDS(ON)=10mΩ@VGS=-10V -30V/-15A,RDS(ON)=15mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Swi.
Pin Description ( TO-252-2L )
AFP3679S
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-20A,RDS(ON)=10mΩ@VGS=-10V .
AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
Download