AFP4401WS mosfet equivalent, p-channel mosfet.
-40V/-10.2A,RDS(ON)= 14mΩ@VGS= -10V -40V/ -8.4A,RDS(ON)= 17mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Load.
Pin Description ( SOP-8P )
AFP4401WS
40V P-Channel Enhancement Mode MOSFET
Features
-40V/-10.2A,RDS(ON)= 14mΩ@VGS= -10.
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