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AFP4447 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP4447, a member of the AFP4447-Alfa P-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

AFP4447, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -40V/ -10A,RDS(ON)= 40mΩ@VGS= -10V -40V/ -8A,RDS(ON)= 55mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Datasheet preview – AFP4447

Datasheet Details

Part number AFP4447
Manufacturer Alfa-MOS
File Size 880.02 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP4447 Datasheet
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Alfa-MOS Technology General Description AFP4447, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP4447 40V P-Channel Enhancement Mode MOSFET Features -40V/ -10A,RDS(ON)= 40mΩ@VGS= -10V -40V/ -8A,RDS(ON)= 55mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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