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AFP4447 - P-Channel Enhancement Mode MOSFET

Download the AFP4447 datasheet PDF. This datasheet also covers the AFP4447-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (AFP4447-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP4447
Manufacturer Alfa-MOS
File Size 880.02 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP4447 Datasheet

General Description

AFP4447, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( TO-252-2L ) AFP4447 40V P-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

  • -40V/ -10A,RDS(ON)= 40mΩ@VGS= -10V -40V/ -8A,RDS(ON)= 55mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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