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AFP4435WS - 30V P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP4435WS, a member of the AFP4435WS-Alfa 30V P-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

AFP4435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=-9A,RDS(ON)=15mΩ@VGS=-10V.
  • ID=-7A,RDS(ON)=23mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP-8P package design.

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Datasheet Details

Part number AFP4435WS
Manufacturer Alfa-MOS
File Size 392.49 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP4435WS Datasheet
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Alfa-MOS Technology General Description AFP4435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP4435WS 30V P-Channel Enhancement Mode MOSFET Features  ID=-9A,RDS(ON)=15mΩ@VGS=-10V  ID=-7A,RDS(ON)=23mΩ@VGS=-4.5V  Super high density cell design for extremely low RDS (ON)  SOP-8P package design Application  LED Display  Load Switch  CCFL Inverter  Power Management in Notebook Computer, Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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