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AFP4435WS - 30V P-Channel Enhancement Mode MOSFET

Download the AFP4435WS datasheet PDF. This datasheet also covers the AFP4435WS-Alfa variant, as both devices belong to the same 30v p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (AFP4435WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP4435WS
Manufacturer Alfa-MOS
File Size 392.49 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP4435WS Datasheet

General Description

AFP4435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( SOP-8P ) AFP4435WS 30V P-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

  • ID=-9A,RDS(ON)=15mΩ@VGS=-10V.
  • ID=-7A,RDS(ON)=23mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP-8P package design.