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AFP4401WS - P-Channel MOSFET

This page provides the datasheet information for the AFP4401WS, a member of the AFP4401WS-Alfa P-Channel MOSFET family.

Datasheet Summary

Description

AFP4401WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -40V/-10.2A,RDS(ON)= 14mΩ@VGS= -10V -40V/ -8.4A,RDS(ON)= 17mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet preview – AFP4401WS

Datasheet Details

Part number AFP4401WS
Manufacturer Alfa-MOS
File Size 567.79 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP4401WS Datasheet
Additional preview pages of the AFP4401WS datasheet.

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Alfa-MOS Technology General Description AFP4401WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP4401WS 40V P-Channel Enhancement Mode MOSFET Features -40V/-10.2A,RDS(ON)= 14mΩ@VGS= -10V -40V/ -8.4A,RDS(ON)= 17mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Load Switch POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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