AFP4403W Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFP4403W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 20V P-Channel Enhancement Mode MOSFET Features -20V/-9A,RDS(ON)=26mΩ@VGS=4.5V -20V/-8A,RDS(ON)=34mΩ@VGS=2.5V -20V/-6A,RDS(ON)=82mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application LED Display Load Switch CCFL Inverter Power Management in Notebook puter, Pin Define Pin 1 2 3 4...