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AFP4403W - P-Channel MOSFET

This page provides the datasheet information for the AFP4403W, a member of the AFP4403W-Alfa P-Channel MOSFET family.

Datasheet Summary

Description

AFP4403W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -20V/-9A,RDS(ON)=26mΩ@VGS=4.5V -20V/-8A,RDS(ON)=34mΩ@VGS=2.5V -20V/-6A,RDS(ON)=82mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet preview – AFP4403W

Datasheet Details

Part number AFP4403W
Manufacturer Alfa-MOS
File Size 578.77 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP4403W Datasheet
Additional preview pages of the AFP4403W datasheet.

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Alfa-MOS Technology General Description AFP4403W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP4403W 20V P-Channel Enhancement Mode MOSFET Features -20V/-9A,RDS(ON)=26mΩ@VGS=4.5V -20V/-8A,RDS(ON)=34mΩ@VGS=2.5V -20V/-6A,RDS(ON)=82mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application LED Display Load Switch CCFL Inverter Power Management in Notebook Computer, Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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