AFP4447 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP4447, a member of the AFP4447-Alfa P-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFP4447
Manufacturer	Alfa-MOS
File Size	880.02 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	AFP4447 Datasheet
Additional preview pages of the AFP4447 datasheet.

AFP4447 Product details

Description

AFP4447, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

-40V/ -10A,RDS(ON)= 40mΩ@VGS= -10V -40V/ -8A,RDS(ON)= 55mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Published: Dec 6, 2018 |