AFP6679S P-Channel Enhancement Mode MOSFET
AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.
AFP6679S Features
* -30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Power Switch Load switch in high current applications DC/DC converters
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part O