AFP6679S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP6679S, a member of the AFP6679S-Alfa P-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFP6679S
Manufacturer	Alfa-MOS
File Size	581.89 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	AFP6679S Datasheet
Additional preview pages of the AFP6679S datasheet.

AFP6679S Product details

Description

AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

-30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

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Published: Dec 6, 2018 |