AFP6679S Datasheet - Alfa-MOS

P-Channel Enhancement Mode MOSFET

AFP6679S Features

* -30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Power Switch Load switch in high current applications DC/DC converters Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part O

AFP6679S General Description

AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP6679S Datasheet (581.89 KB)

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Part number:

AFP6679S

Manufacturer:

Alfa-MOS

File Size:

581.89 KB

Description:

P-channel enhancement mode mosfet.

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AFP6679S P-Channel Enhancement Mode MOSFET Alfa-MOS

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AFP6679S Features

AFP6679S General Description

Datasheet Details

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