AFP6679S mosfet equivalent, p-channel enhancement mode mosfet.
-30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Power S.
Pin Description ( TO-220-3L )
AFP6679S
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10.
AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
Download