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AFP6801 - P-Channel MOSFET

This page provides the datasheet information for the AFP6801, a member of the AFP6801-Alfa P-Channel MOSFET family.

Description

AFP6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -30V/-3.8A,RDS(ON)=135mΩ@VGS=-10.0V -30V/-2.8A,RDS(ON)=175mΩ@VGS=-4.5V -30V/-1.8A,RDS(ON)=245mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

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Datasheet preview – AFP6801

Datasheet Details

Part number AFP6801
Manufacturer Alfa-MOS
File Size 581.16 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP6801 Datasheet
Additional preview pages of the AFP6801 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP6801 30V P-Channel Enhancement Mode MOSFET Features -30V/-3.8A,RDS(ON)=135mΩ@VGS=-10.0V -30V/-2.8A,RDS(ON)=175mΩ@VGS=-4.5V -30V/-1.8A,RDS(ON)=245mΩ@VGS=-2.
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