AFP6801 Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFP6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 30V P-Channel Enhancement Mode MOSFET Features -30V/-3.8A,RDS(ON)=135mΩ@VGS=-10.0V -30V/-2.8A,RDS(ON)=175mΩ@VGS=-4.5V -30V/-1.8A,RDS(ON)=245mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC...