AFP6405WS Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFP6405WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOP-6 ) 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=54mΩ@VGS=-10.0V -30V/-4.0A,RDS(ON)=75mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD...