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AFP6405WS - P-Channel MOSFET

This page provides the datasheet information for the AFP6405WS, a member of the AFP6405WS-Alfa P-Channel MOSFET family.

Description

AFP6405WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-5.0A,RDS(ON)=54mΩ@VGS=-10.0V -30V/-4.0A,RDS(ON)=75mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

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Datasheet preview – AFP6405WS

Datasheet Details

Part number AFP6405WS
Manufacturer Alfa-MOS
File Size 541.33 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP6405WS Datasheet
Additional preview pages of the AFP6405WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP6405WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP6405WS 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=54mΩ@VGS=-10.0V -30V/-4.0A,RDS(ON)=75mΩ@VGS=-4.
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