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AFP6679S Datasheet P-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TO-220-3L ) AFP6679S 30V P-Channel Enhancement Mode MOSFET

Key Features

  • -30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

AFP6679S Distributor