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AFP6679S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP6679S, a member of the AFP6679S-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

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Datasheet Details

Part number AFP6679S
Manufacturer Alfa-MOS
File Size 581.89 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP6679S Datasheet
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Alfa-MOS Technology General Description AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) AFP6679S 30V P-Channel Enhancement Mode MOSFET Features -30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Power Switch Load switch in high current applications DC/DC converters Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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