AFP6679S
AFP6679S is P-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFP6679S-Alfa comparator family.
- Part of the AFP6679S-Alfa comparator family.
Alfa-MOS
Technology
General Description
AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( TO-220-3L )
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Power Switch Load switch in high current applications DC/DC converters
Pin Define
Pin 1 2 3
Symbol G D S
Ordering...
