AFP8995 Datasheet - Alfa-MOS

P-Channel Enhancement Mode MOSFET

AFP8995 Features

* -30V/-4.6A,RDS(ON)= 125mΩ@VGS= -10V -30V/-3.6A,RDS(ON)= 165mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems. Backlight Inverter for LCD Display Load Switch CCFL Inverter Pin

AFP8995 General Description

AFP8995, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFP8995 Datasheet (689.05 KB)

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AFP8995

Manufacturer:

Alfa-MOS

File Size:

689.05 KB

Description:

P-channel enhancement mode mosfet.

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AFP8995 P-Channel Enhancement Mode MOSFET Alfa-MOS

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AFP8995 Features

AFP8995 General Description

Datasheet Details

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