AFP8995 mosfet equivalent, p-channel enhancement mode mosfet.
-30V/-4.6A,RDS(ON)= 125mΩ@VGS= -10V -30V/-3.6A,RDS(ON)= 165mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design
Application
M.
Pin Description ( SOT-89-3L )
AFP8995
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-4.6A,RDS(ON)= 125mΩ@VGS= -1.
AFP8995, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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