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Alfa-MOS

AFP8995 Datasheet Preview

AFP8995 Datasheet

P-Channel Enhancement Mode MOSFET

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Alfa-MOS
Technology
General Description
AFP8995, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-89-3L )
AFP8995
30V P-Channel
Enhancement Mode MOSFET
Features
-30V/-4.6A,RDS(ON)= 125m@VGS= -10V
-30V/-3.6A,RDS(ON)= 165m@VGS= -4.5V
Super high density cell design for extremely
low RDS (ON)
SOT-89-3L package design
Application
Motor and Load Control
LCD TV Inverter & AD/DC Inverter Systems.
Backlight Inverter for LCD Display
Load Switch
CCFL Inverter
Pin Define
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFP8995S89RG
95YW
SOT-89-3L
ϡʳ 95 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP8995S89RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A June 2011
Unit
Tape & Reel
Quantity
1000 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFP8995 Datasheet Preview

AFP8995 Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFP8995
30V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-30
±20
-4.6
-3.6
-10
-1.6
1.45
0.6
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A June 2011
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TA=85к
VDSЉ-5V,VGS=-10V
VGS=-10.0V,ID=-4.6A
VGS=-4.5V,ID=-3.6A
VDS=-5V,ID=-4.0A
IS=-1.7A,VGS=0V
Qg
Qgs
Qgd
VDS=-15V,VGS=-4.5V
ID-2.5A
Ciss
Coss
Crss
VDS=-15V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-15V,RL=7.5
ID-2.0A,VGEN=-10V
RG=1
Min. Typ Max. Unit
-30 V
-1.0 -2.0
±100 nA
-1
-30 uA
-10 A
115
152
125
165
m
10 S
-0.7 -1.3 V
2.5
0.8 nC
1.0
170
50 pF
30
5 10
10
10
16
16
ns
5 10
www.alfa-mos.com
Page 2


Part Number AFP8995
Description P-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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