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AFP8989 - 60V P-Channel MOSFET

This page provides the datasheet information for the AFP8989, a member of the AFP8989-Alfa 60V P-Channel MOSFET family.

Description

AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -60V/-3.6A,RDS(ON)= 145mΩ@VGS= -10V.
  • -60V/-2.6A,RDS(ON)= 155mΩ@VGS= -4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOT-89-3L package design.

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Datasheet preview – AFP8989

Datasheet Details

Part number AFP8989
Manufacturer Alfa-MOS
File Size 450.66 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet AFP8989 Datasheet
Additional preview pages of the AFP8989 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-89-3L ) AFP8989 60V P-Channel Enhancement Mode MOSFET Features  -60V/-3.6A,RDS(ON)= 145mΩ@VGS= -10V  -60V/-2.6A,RDS(ON)= 155mΩ@VGS= -4.5V  Super high density cell design for extremely low RDS (ON)  SOT-89-3L package design Application  Motor and Load Control  LCD TV Inverter & AD/DC Inverter Systems.
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