AFP8989 Description
AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-89-3L ) AFP8989 60V P-Channel Enhancement Mode MOSFET.
AFP8989 Key Features
- 60V/-3.6A,RDS(ON)= 145mΩ@VGS= -10V
- 60V/-2.6A,RDS(ON)= 155mΩ@VGS= -4.5V
- Super high density cell design for extremely
- SOT-89-3L package design
- Motor and Load Control
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