AFP8995 Datasheet PDF

GENERAL DESCRIPTION

AFP8995, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( SOT-89-3L ) AFP8995 30V P-Channel Enhancement Mode MOSFET

FEATURES

-30V/-4.6A,RDS(ON)= 125mΩ@VGS= -10V -30V/-3.6A,RDS(ON)= 165mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems. Backlight Inverter for LCD Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G D S

DESCRIPTION

Gate Drain Source Ordering Information Part Ordering No. Part Marking Package AFP8995S89RG 95YW SOT-89-3L ϡʳ 95 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP8995S89RG : 7