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AFP8995 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP8995, a member of the AFP8995-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP8995, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-4.6A,RDS(ON)= 125mΩ@VGS= -10V -30V/-3.6A,RDS(ON)= 165mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design.

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Datasheet preview – AFP8995

Datasheet Details

Part number AFP8995
Manufacturer Alfa-MOS
File Size 689.05 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP8995 Datasheet
Additional preview pages of the AFP8995 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP8995, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-89-3L ) AFP8995 30V P-Channel Enhancement Mode MOSFET Features -30V/-4.6A,RDS(ON)= 125mΩ@VGS= -10V -30V/-3.6A,RDS(ON)= 165mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems.
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