AFP9530S Datasheet, Alfa-MOS

* -60V/-25A,RDS(ON)= 26mΩ@VGS= -10V
* -60V/-15A,RDS(ON)= 36mΩ@VGS= -4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package d.

Pin Description ( TO-252-2L ) AFP9530S 60V P-Channel Enhancement Mode MOSFET Features
* -60V/-25A,RDS(ON)= 26mΩ@VG.

AFP9530S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.