AFP9532S mosfet equivalent, p-channel enhancement mode mosfet.
-60V/-20A,RDS(ON)= 37mΩ@VGS= -10V -60V/-10A,RDS(ON)= 45mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Load .
Pin Description ( TO-252-2L )
AFP9532S
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-20A,RDS(ON)= 37mΩ@VGS= -10.
AFP9532S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
Download