AFP9565S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP9565S, a member of the AFP9565S-Alfa P-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFP9565S
Manufacturer	Alfa-MOS
File Size	821.34 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	AFP9565S Datasheet
Additional preview pages of the AFP9565S datasheet.

AFP9565S Product details

Description

AFP9565S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

-40V/ -8.6A,RDS(ON)= 58mΩ@VGS= -10V -40V/ -6.2A,RDS(ON)= 86mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Published: Dec 6, 2018 |