AFP9569 mosfet equivalent, p-channel enhancement mode mosfet.
* -40V/ -10A,RDS(ON)=100mΩ@VGS= -10V
* -40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V
* Super high density cell design for extremely
low RDS (ON)
* TO-252-2L package.
Pin Description ( TO-252-2L )
AFP9569
40V P-Channel Enhancement Mode MOSFET
Features
* -40V/ -10A,RDS(ON)=100mΩ@VG.
AFP9569, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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