• Part: AS4C1M16E5
  • Description: 5V 1M x 16 CMOS DRAM
  • Manufacturer: Alliance Semiconductor
  • Size: 635.37 KB
Download AS4C1M16E5 Datasheet PDF
AS4C1M16E5 page 2
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AS4C1M16E5 page 3
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Datasheet Summary

$XJXVW - $6&0( 9 0î &026 '5$0 ('2 )HDWXUHV - Organization: 1,048,576 words × 16 bits - High speed - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time - 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write - TTL-patible, three-state DQ - JEDEC standard package and pinout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 - Low power consumption - Active: 740 mW max (AS4C1M16E5-60) - Standby: 5.5 mW max, CMOS DQ - 5V power supply - Industrial and mercial temperature available - Extended data out 3LQ DUUDQJHPHQW 62Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 DQ7 DQ8 NC NC WE RAS NC NC A0...