AS4C4M4F0 Datasheet PDF (5V 4M x 4 CMOS DRAM) | Download Alliance Semiconductor AS4C4M4F0

AS4C4M4F0 - 5V 4M x 4 CMOS DRAM

Description

A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access ti

Features

Organization: 4,194,304 words × 4 bits.
High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time.
Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O.
Fast page mode.
Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh.
TTL-compatible, three-stat.

Datasheet Details

Part number	AS4C4M4F0
Manufacturer	Alliance Semiconductor
File Size	259.46 KB
Description	5V 4M x 4 CMOS DRAM
Datasheet	AS4C4M4F0 Datasheet
Additional preview pages of the AS4C4M4F0 datasheet.

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Full PDF Text Transcription

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® 5V 4M×4 CMOS DRAM (Fast Page mode) AS4C4M4F0 AS4C4M4F1 Features • Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption - Active: 908 mW max - Standby: 5.

Published: Nov 24, 2014 |