AS4C64M16D1 - 64M x 16 bit DDR1 Synchronous DRAM

Alliance Semiconductor

Datasheet Details

Part number	AS4C64M16D1
Manufacturer	Alliance Semiconductor
File Size	5.57 MB
Description	64M x 16 bit DDR1 Synchronous DRAM
Datasheet	AS4C64M16D1-AllianceSemiconductor.pdf

The AS4C64M16D1 is a four bank DDR DRAM organized as 4 banks x 16Mbit x 16.

High speed data transfer rates with system frequency up to 200MHz - Data Mask for Write Control - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 2.5, 3 - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type - Automatic and Controlled Precharge Command - Power Down Mode - Auto Refresh and Self Refresh - Refresh Interval: 8192 cycles/64 ms - Available in 66 Pin TSOP II - SSTL-2 Compatible I/Os -.

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Published: Oct 13, 2019 |