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AS4C64M16MD1 Datasheet, Alliance Semiconductor

AS4C64M16MD1 sdram equivalent, 1 gb (64m x 16 bit) 1.8v high performance mobile ddr sdram.

AS4C64M16MD1 Avg. rating / M : 1.0 rating-15

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AS4C64M16MD1 Datasheet

Features and benefits

Description - 4 banks x 16M x 16 organization - Data Mask for Write Control (DM) - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 3 - Programmable Wr.

Description

- 4 banks x 16M x 16 organization - Data Mask for Write Control (DM) - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 3 - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length: 2, 4, 8 or 16 for Sequenti.

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