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Alliance Semiconductor Corporation

AS7C33512FT18A Datasheet Preview

AS7C33512FT18A Datasheet

3.3V 512K x 18 Flow-through synchronous SRAM

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November 2004
AS7C33512FT18A
®
3.3V 512K × 18 Flow-through synchronous SRAM
Features
• Organization: 524,288 words × 18 bits
• Fast clock to data access: 7.5/8.5/10ns
• Fast OE access time: 3.5/4.0 ns
• Fully synchronous flow-through operation
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Individual byte write and global write
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• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Linear or interleaved burst control
• Snooze mode for reduced power-standby
• Common data inputs and data outputs
Logic block diagram
CLK
ADV
ADSC
ADSP
A[18:0]
GWE
BWb
BWE
BWa
CCEE01
CE2
ZZ
OE
19
Power
down
LBO
CLK
CS Burst logic
CLR
D Q 19
CS
Address
register
CLK
17 19
512K x 18
Memory
array
18 18
D DQb Q
Byte Write
registers
CLK
D DQa Q
BreygteisWterritse
CLK
D Enable Q
register
CE
CLK
D Enable Q
redgeilsatyer
CLK
2
OE
Output
registers
CLK
Input
registers
CLK
18
DQ[a,b]
Selection guide
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
-75 -85 -10 Units
8.5 10 12 ns
7.5 8.5 10 ns
300 275 250 mA
110 100
90 mA
30 30 30 mA
11/30/04, v 1.1
Alliance Semiconductor
1 of 19
Copyright © Alliance Semiconductor. All rights reserved.




Alliance Semiconductor Corporation

AS7C33512FT18A Datasheet Preview

AS7C33512FT18A Datasheet

3.3V 512K x 18 Flow-through synchronous SRAM

No Preview Available !

®
8 Mb Synchronous SRAM products list1,2
Org Part Number
512KX18
AS7C33512PFS18A
256KX32
AS7C33256PFS32A
256KX36
AS7C33256PFS36A
512KX18
AS7C33512PFD18A
256KX32
AS7C33256PFD32A
256KX36
AS7C33256PFD36A
512KX18
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256KX32
AS7C33512FT18A
AS7C33256FT32A
256KX36
AS7C33256FT36A
512KX18
AS7C33512NTD18A
256KX32
AS7C33256NTD32A
256KX36
AS7C33256NTD36A
512KX18
AS7C33512NTF18A
256KX32
AS7C33256NTF32A
256KX36
AS7C33256NTF36A
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
Mode
PL-SCD
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
FT
FT
NTD-PL
NTD-PL
NTD-PL
NTD-FT
NTD-FT
NTD-FT
PL-SCD : Pipelined Burst Synchronous SRAM - Single Cycle Deselect
PL-DCD : Pipelined Burst Synchronous SRAM - Double Cycle Deselect
FT : Flow-through Burst Synchronous SRAM
NTD1-PL : Pipelined Burst Synchronous SRAM with NTDTM
NTD-FT : Flow-through Burst Synchronous SRAM with NTDTM
AS7C33512FT18A
Speed
166/133 MHz
166/133 MHz
166/133 MHz
166/133 MHz
166/133 MHz
166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
166/133 MHz
166/133 MHz
166/133 MHz
7.5/8.5/10 ns
7.5/8.5/10 ns
7.5/8.5/10 ns
1NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of
their respective owners.
11/30/04, v 1.1
Alliance Semiconductor
2 of 19


Part Number AS7C33512FT18A
Description 3.3V 512K x 18 Flow-through synchronous SRAM
Maker Alliance Semiconductor Corporation
Total Page 19 Pages
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