Datasheet Details
| Part number | AO4264E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 390.15 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AO4264E Datasheet
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| Part number | AO4264E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 390.15 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AO4264E Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • ESD protected Applications • High efficiency power supply • Secondary synchronus rectifier Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 13.5A < 9.8mΩ < 13.5mΩ HBM Class 2 Top View D D D D SOIC-8 Bottom View G S S S PIN1 Orderable Part Number Package Type AO4264E SO-8 D PIN1 G S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy VDS Spike G Power Dissipation B L=0.3mH 10µs TA=25°C TA=70°C C VGS ID IDM IAS EAS VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 13.5 10.5 54 17 43 72 3.1 2.0 -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: May 2016 www.aosmd.com Page 1 of 5 AO4264E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=60V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=13.5A Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=11.5A VDS=5V, ID=13.5A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz SWI
AO4264E 60V N-Channel AlphaSGT TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4264 | N-Channel MOSFET | Kexin |
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AO4264-HF | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4264 | 60V N-Channel MOSFET |
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