VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V)
The AO4415 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM.
Full PDF Text Transcription for AO4415 (Reference)
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August 2002 AO4415 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VG...
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eet4U.com provide Features VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V) The AO4415 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±25 -8 -6.6 -40 3 2.
AO4415 Datasheet
