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AO4418 - N-Channel FET

General Description

The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 11.5A (VGS = 20V) RDS(ON) < 14mΩ (VGS = 20V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain CurrentB ID IDM TA=25°C Power Dissipation TA=70°C Avalanche CurrentB Repetitive avalanche energy 0.3mHB PD IAR EAR Junction.

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Full PDF Text Transcription for AO4418 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO4418. For precise diagrams, and layout, please refer to the original PDF.

AO4418 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge....

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ed trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4418 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 11.5A (VGS = 20V) RDS(ON) < 14mΩ (VGS = 20V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.

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