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AO4427 - P-Channel FET

General Description

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Key Features

  • VDS (V) = -30V ID = -12.5 A (VGS = -20V) RDS(ON) < 12mΩ (VGS = -20V) RDS(ON) < 14mΩ (VGS = -10V) ESD Rating: 2KV HBM The AO4427 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM.

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Full PDF Text Transcription for AO4427 (Reference)

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AO4427 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -12.5 A (VGS = -20V) RDS(ON) < 12mΩ...

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ovide Features VDS (V) = -30V ID = -12.5 A (VGS = -20V) RDS(ON) < 12mΩ (VGS = -20V) RDS(ON) < 14mΩ (VGS = -10V) ESD Rating: 2KV HBM The AO4427 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS & Sony 259 specifications). AO4427L is a Green Product ordering option.

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