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AO4429 - P-Channel FET

General Description

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Key Features

  • VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.7mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) ESD Rating: 4KV HBM The AO4429 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L is a Green Product ordering option. AO4429 and AO4429L are electrically identical. SOIC-8 Top View S S S G D D D D.

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Full PDF Text Transcription for AO4429 (Reference)

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AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7....

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ovide Features VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.7mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) ESD Rating: 4KV HBM The AO4429 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L is a Green Product ordering option. AO4429 and AO4429L are electrically identical.

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