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AO4442 - N-Channel MOSFET

General Description

The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and www.DataSheet4U.com operation with gate voltages from 4.5V to 25V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = 75V ID = 3.1A (VGS = 10V) RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.5V) D S S S G D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 75 ±25 3.1 2.5 20 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Par.

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Full PDF Text Transcription for AO4442 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO4442. For precise diagrams, and layout, please refer to the original PDF.

AO4442 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and...

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ed trench technology to provide excellent RDS(ON), low gate charge and www.DataSheet4U.com operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4442 is Pb-free (meets ROHS & Sony 259 specifications). AO4442L is a Green Product ordering option. AO4442 and AO4442L are electrically identical. Features VDS (V) = 75V ID = 3.1A (VGS = 10V) RDS(ON) < 130mΩ (VGS = 10V) RDS(ON) < 165mΩ (VGS = 4.