Datasheet4U Logo Datasheet4U.com

AO4443 - 40V P-Channel MOSFET

General Description

The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

📥 Download Datasheet

Full PDF Text Transcription for AO4443 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO4443. For precise diagrams, and layout, please refer to the original PDF.

AO4443 40V P-Channel MOSFET General Description Product Summary The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely l...

View more extracted text
MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) 100% UIS Tested 100% Rg Tested -40V -6A < 42mΩ < 63mΩ Top View D D D D SOIC-8 Bottom View G S S S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.