Datasheet Details
| Part number | AO4444L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 275.28 KB |
| Description | 80V N-Channel MOSFET |
| Download | AO4444L Download (PDF) |
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| Part number | AO4444L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 275.28 KB |
| Description | 80V N-Channel MOSFET |
| Download | AO4444L Download (PDF) |
|
|
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The AO4444L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 80V 11A < 12mΩ < 14.5mΩ SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±25 11 9 80 45 101 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev0: July 2009 www.aosmd.com Page 1 of 6 AO4444L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 80 V IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C 10 µA 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.6 3 3.8 V ID(ON) On state drain current VGS=10V, VDS=5V 80 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A TJ=125°C 10 12 mΩ 18 22 VGS=7V, ID=10A 11.6 14.5 mΩ gFS Forward Transconductance VDS=5V, ID=11A 32 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 4.5 A DYNAM
AO4444L 80V N-Channel MOSFET SDMOS TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4444 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4444 | N-Channel MOSFET |
| AO4440 | N-Channel MOSFET |
| AO4441 | 60V P-Channel MOSFET |
| AO4442 | N-Channel MOSFET |
| AO4443 | 40V P-Channel MOSFET |
| AO4446 | N-Channel MOSFET |
| AO4447 | P-Channel MOSFET |
| AO4447A | 30V P-Channel MOSFET |
| AO4448 | 80V N-Channel MOSFET |
| AO4448L | 80V N-Channel MOSFET |