Datasheet Details
| Part number | AO6801E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.22 KB |
| Description | 30V Dual P-Channel MOSFET |
| Download | AO6801E Download (PDF) |
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| Part number | AO6801E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.22 KB |
| Description | 30V Dual P-Channel MOSFET |
| Download | AO6801E Download (PDF) |
|
|
|
Product Summary The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) Typical ESD protection -30V -2A < 110mΩ < 135mΩ < 185mΩ HBM Class 1C TSOP6 D1 Top View Bottom View Top View G1 1 S2 2 G2 3 6 D1 5 S1 4 D2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G1 G2 S1 Maximum -30 ±12 -2.0 -1.6 -15 0.70 0.45 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 150 185 Maximum Junction-to-Lead Steady-State RθJL 150 Max 180 230 180 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 0: April 2012 www.aosmd.com Page 1 of 5 AO6801E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 µA -5 IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±10 µA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.7 -1.05 -1.5 V ID(ON) On state drain current VGS=-10V, VDS=-5V -15 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.5A TJ=125°C 90 110 mΩ 129 158 105 135 mΩ VGS=-2.5V, ID=-1A 140 185 mΩ gFS Forward Transconductance VDS=-5V, ID=-2A 7 S VSD Diode Forward Voltage IS=-1A,VGS=0V -0.78 -1 V IS Maximum Body-Diode Continuous Current -1 A DYNAMIC PARAMETERS Ciss Input Capacitanc
AO6801E 30V Dual P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO6801E | 20V Dual P-Channel MOSFET | VBsemi |
 |
AO6801E | Dual P-Channel MOSFET | Kexin |
|
AO6801 | Dual P-Channel MOSFET | Kexin |
|
AO6801 | Dual P-Channel MOSFET | VBsemi |
|
AO6801A | Dual P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO6801 | Dual P-Channel MOSFET |
| AO6801A | 30V Dual P-Channel MOSFET |
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| AO6802 | 30V Dual N-Channel MOSFET |
| AO6804 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO6804A | 20V Dual N-Channel MOSFET |
| AO6808 | Dual N-Channel MOSFET |
| AO6810 | Dual N-Channel MOSFET |
| AO6400 | 30V N-Channel MOSFET |
| AO6401 | 30V P-Channel MOSFET |