Datasheet Details
| Part number | AO9926B |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 245.09 KB |
| Description | 20V Dual N-Channel MOSFET |
| Datasheet |
 AO9926B Datasheet
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| Part number | AO9926B |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 245.09 KB |
| Description | 20V Dual N-Channel MOSFET |
| Datasheet |
AO9926B Datasheet
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Product Summary The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.
This device is suitable for use as a unidirectional or bi-directional load switch.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) 20V 7.6A < 23mW < 26mW < 34mW < 52mW Top View SOIC-8 Bottom View Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 7.6 6.1 38 2 1.28 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 3.1: April 2024 www.aosmd.com Page 1 of 5 AO9926B Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 20 IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 0.4 ID(ON) On state drain current VGS=10V, VDS=5V 38 VGS=10V, ID=7.6A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7A VGS=2.5V, ID=6A VGS=1.8V, ID=2A gFS Forward Transconductance VDS=5V, ID=7.6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current V 1 mA 5 ±100 nA 0.75 1.1 V A 16.5 23 mW 25 30 18.5 26 mW 24 34 mW 32 52 mW
AO9926B 20V Dual N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO9926 | Dual N-Channel MOSFET | Alpha Industries |
| ETC | AO9926A | Dual N-Channel MOSFET | ETC |
| Part Number | Description |
|---|---|
| AO9926E | Dual N-Channel MOSFET |