AOB403 Datasheet P-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Datasheet Details

The AOB403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the D2-PAK package, this device is well suited for high current load applications.

Standard product AOB403 is Pb-free (meets ROHS & Sony 259 specifications).

AOB403 P-Channel Enhancement Mode Field Effect Transistor General.

VDS (V) = -60V ID = -30A (VGS=-10V) RDS(ON) < 44mΩ (VGS = -10V ) @ 30A RDS(ON) < 55mΩ (VGS = -4.5V ) @ 20A TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power.