AOB414L - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AOB414L
Manufacturer	Alpha & Omega Semiconductors
File Size	109.93 KB
Description	N-Channel MOSFET
Datasheet	AOB414L-AlphaOmegaSemiconductors.pdf

The AOB414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

VDS (V) = 30V ID = 110A RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 4.8mΩ (VGS = 4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B,G TC=25°C G TC=100°C B ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C.

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Published: Mar 19, 2018 |