Datasheet Details
| Part number | AOB466L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 243.61 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOB466L Download (PDF) |
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| Part number | AOB466L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 243.61 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOB466L Download (PDF) |
|
|
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Product Summary The AOT466L & AOB466L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 60V 180A < 3.9mΩ Top View D TO220 Bottom View D Top View TO-263 D2PAK Bottom View D D G DS SDG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G S Maximum 60 ±25 180 140 540 15 12 80 960 333 167 1.9 1.2 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 54 0.35 Max 15 65 0.45 D G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev0: Otc 2010 www.aosmd.com Page 1 of 6 AOT466L/AOB466L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 3.6 4.3 5 V ID(ON) On state drain current VGS=10V, VDS=5V 540 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TO220 VGS=10V, ID=20A TJ=125°C 3.2 3.9 mΩ 5.2 6.3 TO263 2.9 3.6 mΩ gFS Forward Transconductance VDS=5V,
AOT466L/AOB466L 60V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOB466L | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOB462L | 60V N-Channel MOSFET |
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| AOB405 | P-Channel MOSFET |
| AOB409L | 60V P-Channel MOSFET |
| AOB410L | 100V N-Channel MOSFET |
| AOB411L | 60V P-Channel MOSFET |
| AOB412L | N-Channel MOSFET |
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| AOB414L | N-Channel MOSFET |
| AOB416 | N-Channel MOSFET |