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AOCA32116E Datasheet 20v Common-drain Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOCA32116E 20V Common-Drain Dual N-Channel MOSFET General.

General Description

• Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 20V < 36mΩ < 39mΩ < 44mΩ < 55mΩ HBM Class 2 AlphaDFN 1.20x1.20_4 Top View Bottom View Top View D1 D2 Pin1 Orderable Part Number AOCA32116E S2 G2 S1 G1 Pin1 Package Type AlphaDFN 1.20x1.20_4 G1 Form Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 VGS TA=25°C IS ISM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Rating 20 ±12 6 25 1.7 -55 to 150 Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RqJA Note 1.

Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.

Note 2.

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