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AOCA33103E Datasheet 12v Common-drain Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOCA33103E 12V Common-Drain Dual N-Channel MOSFET General.

General Description

• Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 1.8mΩ < 2mΩ < 2.3mΩ < 2.8mΩ HBM Class 3A AlphaDFNTM 2.52x2.52_10 Top View Bottom View Top View 5 10 4 9 3 8 2 7 G1 Pin1 Orderable Part Number AOCA33103E 1 6 Pin1 1,2,4,5 : Source1(FET1) 6,7,9,10 : Source2(FET2) 3: Gate1(FET1) 8: Gate2(FET2) Package Type AlphaDFNTM2.52x2.52_10 Form Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 VGS TA=25°C IS ISM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 40 110 3.1 -55 to 150 Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RqJA Note 1.

Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.

Note 2.

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