Datasheet Details
| Part number | AOD4130 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.75 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOD4130 Download (PDF) |
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| Part number | AOD4130 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.75 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOD4130 Download (PDF) |
|
|
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The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 60V 30A < 24mW < 30mW TopView TO252 DPAK Bottom View D Top View TO-251A IPAK Bottom View D DS G DG S S D G G G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 30 20 74 6.5 5 27 36.5 52 25 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12.4 34 2.4 Max 20 50 2.9 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.1: January 2024 www.aosmd.com Page 1 of 6 AOD4130/AOI4130 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=5V, ID=250mA 1.6 2.2 2.8 V ID(ON) On state drain current VGS=10V, VDS=5V 74 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 19.5 24 mW 37.5 45 VGS=4.5V, ID=20A 24 30 mW gFS Forward Trans
AOD4130/AOI4130 60V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOD4130 | N-Channel MOSFET | INCHANGE |
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