Datasheet Details
| Part number | AOD4182 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 284.93 KB |
| Description | 80V N-Channel MOSFET |
| Download | AOD4182 Download (PDF) |
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| Part number | AOD4182 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 284.93 KB |
| Description | 80V N-Channel MOSFET |
| Download | AOD4182 Download (PDF) |
|
|
|
The AOD4182 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=7V) 80V 53A < 15.5mΩ < 20mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D G Bottom View D S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH Power Dissipation B C C Maximum 80 ±25 53 38 85 8.5 6.8 45 101 100 50 2.5 1.6 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C TC=25°C TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 40 1 Max 20 50 1.5 Units °C/W °C/W °C/W Rev0: Jan 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AOD4182 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=7V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG 1335 VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz 150 40 0.35 22 VGS=10V, VDS=40V, ID=20A 8.8 5 VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 14.5 45.
AOD4182 80V N-Channel MOSFET TM SDMOS General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOD4182 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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| AOD4180 | 80V N-Channel MOSFET |
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| AOD4186 | 40V N-Channel MOSFET |
| AOD4187 | P-Channel MOSFET |
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| AOD410 | N-Channel MOSFET |
| AOD4100 | N-Channel MOSFET |