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AOD420 - N-Channel MOSFET

Description

The AOD420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AOD420 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation Power Dissipation B C C Maximum 30 ±20 10 10 30 15 36 60 30 2.5 1.6 -55 to 175 Units V V A A.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com AOD420 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD420 is Pb-free (meets ROHS & Sony 259 specifications). AOD420L is a Green Product ordering option. AOD420 and AOD420L are electrically identical. Features VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.
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