900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Alpha & Omega Semiconductors

AOD424 Datasheet Preview

AOD424 Datasheet

20V N-Channel MOSFET

No Preview Available !

AOD424
20V N-Channel MOSFET
General Description
Product Summary
The AOD424 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=2.5V)
100% UIS Tested
100% Rg Tested
20V
45A
< 4.4m
< 5.7m
Top View
TO252
DPAK
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
20
±12
45
35
160
18
15
57
162
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16
41
1.2
Max
20
50
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2011
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOD424 Datasheet Preview

AOD424 Datasheet

20V N-Channel MOSFET

No Preview Available !

AOD424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.5 1 1.6 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
160
A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
TJ=125°C
3.6 4.4
m
5.1 6.2
VGS=2.5V, ID=20A
4.5 5.7 m
gFS Forward Transconductance
VDS=5V, ID=20A
105 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.7 1
45
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3080
520
350
0.6
3860
740
580
1.4
4630
960
810
2.1
pF
pF
pF
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
28 36 43 nC
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=20A
9 nC
Qgd Gate Drain Charge
12 nC
tD(on)
Turn-On DelayTime
7 ns
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=0.5, 8 ns
tD(off)
Turn-Off DelayTime
RGEN=3
70 ns
tf Turn-Off Fall Time
18 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
13 17 20 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
29 36 43 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
www.aosmd.com
Page 2 of 6


Part Number AOD424
Description 20V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
PDF Download

AOD424 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 AOD420 N-Channel Enhancement Mode Field Effect Transistor
Alpha & Omega Semiconductors
2 AOD421 P-Channel Enhancement Mode Field Effect Transistor
Alpha & Omega Semiconductors
3 AOD422 N-Channel Enhancement Mode Field Effect Transistor
Alpha & Omega Semiconductors
4 AOD424 20V N-Channel MOSFET
Alpha & Omega Semiconductors
5 AOD4286 100V N-Channel MOSFET
Alpha & Omega Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy