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AOD434 - N-Channel MOSFET

Description

The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected to a 2KV HBM rating.

Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 20V ID = 18A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 2.5V) RDS(ON) < 30mΩ (VGS = 1.8V) ESD Rating: 2KV HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation Power Dissipation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOD434 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 specifications). AOD434L is a Green Product ordering option. AOD434 and AOD434L are electrically identical. Features VDS (V) = 20V ID = 18A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 2.5V) RDS(ON) < 30mΩ (VGS = 1.
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