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AOD438 - N-Channel MOSFET

Datasheet Summary

Description

The AOD438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

This device is ideally suited for use as a low side switch in CPU core power conversion.

Standard Product AOD438 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.5mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 85 63 200 30 112 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD PD.

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Datasheet Details

Part number AOD438
Manufacturer Alpha & Omega Semiconductors
File Size 186.30 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD438 Datasheet
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www.DataSheet4U.com AOD438 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD438 is Pb-free (meets ROHS & Sony 259 specifications). AOD438L is a Green Product ordering option. AOD438 and AOD438L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.5mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.
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